ZTX688B
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- Mfr.Part #
- ZTX688B
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 12V 3A E-LINE
- Stock
- 37,044
- In Stock ：
- 37,044
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- E-Line-3
- Peak Reflow Temperature (Cel) :
- 260
- Manufacturer Package Identifier :
- E-Line
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Published :
- 2006
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 20mA, 3A
- Collector Emitter Saturation Voltage :
- 350mV
- Gain Bandwidth Product :
- 150MHz
- Base Part Number :
- ZTX688B
- Current Rating :
- 3A
- Mount :
- Through Hole
- Max Collector Current :
- 3A
- Weight :
- 453.59237mg
- Voltage - Rated DC :
- 12V
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100mA 2V
- Collector Base Voltage (VCBO) :
- 12V
- Height :
- 4.01mm
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1W
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- 3A
- HTS Code :
- 8541.29.00.75
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 12V
- Radiation Hardening :
- No
- Transition Frequency :
- 150MHz
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 12V
- Operating Temperature :
- -55°C~200°C TJ
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Length :
- 4.77mm
- Number of Pins :
- 3
- Terminal Form :
- Wire
- Width :
- 2.41mm
- Terminal Finish :
- Matte Tin (Sn)
- Factory Lead Time :
- 30 Weeks
- Datasheets
- ZTX688B
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX688B Overview
DC current gain in this device equals 500 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 350mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 350mV @ 20mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at 3A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.As a result, the part has a transition frequency of 150MHz.In extreme cases, the collector current can be as low as 3A volts.
ZTX688B Features
the DC current gain for this device is 500 @ 100mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 20mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 150MHz
ZTX688B Applications
There are a lot of Diodes Incorporated
ZTX688B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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