ZTX657STOA
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- Mfr.Part #
- ZTX657STOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A E-LINE
- Stock
- 23,248
- In Stock ：
- 23,248
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Terminal Form :
- Wire
- Current Rating :
- 500mA
- Number of Terminations :
- 3
- Height :
- 4.01mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- E-Line-3, Formed Leads
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 30MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 300V
- Collector Base Voltage (VCBO) :
- 300V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 5V
- Max Collector Current :
- 500mA
- Length :
- 4.77mm
- Terminal Finish :
- MATTE TIN
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Transition Frequency :
- 30MHz
- Continuous Collector Current :
- 500mA
- Width :
- 2.41mm
- Transistor Type :
- NPN
- Published :
- 2012
- Collector Emitter Voltage (VCEO) :
- 500mV
- JESD-30 Code :
- R-PSIP-W3
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- Base Part Number :
- ZTX657
- Collector Emitter Breakdown Voltage :
- 300V
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 1W
- HTS Code :
- 8541.29.00.95
- JESD-609 Code :
- e3
- Weight :
- 453.59237mg
- Operating Temperature :
- -55°C~200°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- ZTX657STOA
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX657STOA Overview
DC current gain in this device equals 50 @ 100mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 30MHz.In extreme cases, the collector current can be as low as 500mA volts.
ZTX657STOA Features
the DC current gain for this device is 50 @ 100mA 5V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 30MHz
ZTX657STOA Applications
There are a lot of Diodes Incorporated
ZTX657STOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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