ZTX657STOA
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- Mfr.Part #
- ZTX657STOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A E-LINE
- Stock
- 23,248
- In Stock ：
- 23,248
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 30MHz
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 300V
- Continuous Collector Current :
- 500mA
- Element Configuration :
- Single
- Width :
- 2.41mm
- Package / Case :
- E-Line-3, Formed Leads
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- Unknown
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 300V
- Weight :
- 453.59237mg
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 300V
- JESD-30 Code :
- R-PSIP-W3
- Published :
- 2012
- Collector Emitter Voltage (VCEO) :
- 500mV
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Terminal Form :
- Wire
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Current Rating :
- 500mA
- Mount :
- Through Hole
- Terminal Finish :
- MATTE TIN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 4.01mm
- Max Power Dissipation :
- 1W
- Transition Frequency :
- 30MHz
- Max Collector Current :
- 500mA
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 4.77mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.29.00.95
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~200°C TJ
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 5V
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Base Part Number :
- ZTX657
- Datasheets
- ZTX657STOA
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX657STOA Overview
DC current gain in this device equals 50 @ 100mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 30MHz.In extreme cases, the collector current can be as low as 500mA volts.
ZTX657STOA Features
the DC current gain for this device is 50 @ 100mA 5V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 30MHz
ZTX657STOA Applications
There are a lot of Diodes Incorporated
ZTX657STOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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