ZTX657
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- Mfr.Part #
- ZTX657
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A E-LINE
- Stock
- 4,004
- In Stock ：
- 4,004
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 30MHz
- Transition Frequency :
- 30MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 500mA
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 500mV
- Pin Count :
- 3
- Element Configuration :
- Single
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 500mA
- Voltage - Rated DC :
- 300V
- Packaging :
- Bulk
- Factory Lead Time :
- 15 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 5V
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 300V
- Mount :
- Through Hole
- Published :
- 2012
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- Width :
- 2.41mm
- Frequency :
- 30MHz
- Terminal Form :
- Wire
- Number of Terminations :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Base Part Number :
- ZTX657
- Package / Case :
- E-Line-3
- Mounting Type :
- Through Hole
- Length :
- 4.77mm
- Height :
- 4.01mm
- Continuous Collector Current :
- 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 300V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Max Power Dissipation :
- 1W
- Power Dissipation :
- 1W
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Weight :
- 453.59237mg
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 300V
- Datasheets
- ZTX657
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX657 Overview
This device has a DC current gain of 50 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 500mA is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.In this part, there is a transition frequency of 30MHz.The maximum collector current is 500mA volts.
ZTX657 Features
the DC current gain for this device is 50 @ 100mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 30MHz
ZTX657 Applications
There are a lot of Diodes Incorporated
ZTX657 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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