ZTX655STOA
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- Mfr.Part #
- ZTX655STOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 150V 1A E-LINE
- Stock
- 36,798
- In Stock ：
- 36,798
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 1A
- Mount :
- Through Hole
- Base Part Number :
- ZTX655
- Package / Case :
- E-Line-3, Formed Leads
- Continuous Collector Current :
- 1A
- Width :
- 2.41mm
- Weight :
- 453.59237mg
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- HTS Code :
- 8541.29.00.95
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Length :
- 4.77mm
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 150V
- Pin Count :
- 3
- Height :
- 4.01mm
- Collector Emitter Voltage (VCEO) :
- 500mV
- Max Collector Current :
- 1A
- Operating Temperature :
- -55°C~200°C TJ
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 5V
- Collector Emitter Breakdown Voltage :
- 150V
- Transistor Element Material :
- SILICON
- Terminal Form :
- Wire
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 30MHz
- JESD-30 Code :
- R-PSIP-W3
- Published :
- 2012
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 30MHz
- Voltage - Rated DC :
- 150V
- Number of Elements :
- 1
- Current Rating :
- 1A
- Datasheets
- ZTX655STOA
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX655STOA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 500mA 5V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 30MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
ZTX655STOA Features
the DC current gain for this device is 50 @ 500mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 30MHz
ZTX655STOA Applications
There are a lot of Diodes Incorporated
ZTX655STOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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