ZTX653STOB
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- Mfr.Part #
- ZTX653STOB
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A E-LINE
- Stock
- 32,725
- In Stock ：
- 32,725
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 140MHz
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- ECCN Code :
- EAR99
- Continuous Collector Current :
- 2A
- Collector Base Voltage (VCBO) :
- 120V
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 100V
- Weight :
- 453.59237mg
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 2A
- Published :
- 2012
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Length :
- 4.77mm
- Collector Emitter Voltage (VCEO) :
- 100V
- Pin Count :
- 3
- Height :
- 4.01mm
- Reference Standard :
- CECC
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Wire
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 175MHz
- DC Current Gain-Min (hFE) :
- 25
- Operating Temperature :
- -55°C~200°C TJ
- Package / Case :
- E-Line-3, Formed Leads
- Voltage - Rated DC :
- 100V
- Polarity/Channel Type :
- NPN
- Width :
- 2.41mm
- Base Part Number :
- ZTX653
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 1W
- JESD-609 Code :
- e3
- Frequency :
- 175MHz
- Mounting Type :
- Through Hole
- Terminal Finish :
- MATTE TIN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 1W
- Current Rating :
- 2A
- Mount :
- Through Hole
- Number of Elements :
- 1
- Datasheets
- ZTX653STOB
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX653STOB Description
ZTX653STOB is a 120V NPN silicon planar medium power transistor. Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high-frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.
ZTX653STOB Features
100 Volt VCEO
2 Amp continuous current
Low saturation voltage
Ptot=1 Watt
ZTX653STOB Applications
Automotive
Advanced driver assistance systems (ADAS)
Industrial
Building automation
Enterprise systems
Enterprise machine
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