ZTX653STOB
- Mfr.Part #
- ZTX653STOB
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A E-LINE
- Stock
- 32,725
- In Stock :
- 32,725
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- MATTE TIN
- Pin Count :
- 3
- Package / Case :
- E-Line-3, Formed Leads
- Length :
- 4.77mm
- Width :
- 2.41mm
- Height :
- 4.01mm
- Frequency :
- 175MHz
- Collector Base Voltage (VCBO) :
- 120V
- DC Current Gain-Min (hFE) :
- 25
- Base Part Number :
- ZTX653
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Reference Standard :
- CECC
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 1W
- Transition Frequency :
- 140MHz
- Max Collector Current :
- 2A
- Number of Elements :
- 1
- Terminal Form :
- Wire
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Weight :
- 453.59237mg
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 175MHz
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 100V
- Current Rating :
- 2A
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Published :
- 2012
- Voltage - Rated DC :
- 100V
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage :
- 100V
- Qualification Status :
- Not Qualified
- Continuous Collector Current :
- 2A
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~200°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e3
- Power Dissipation :
- 1W
- Datasheets
- ZTX653STOB
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX653STOB Description
ZTX653STOB is a 120V NPN silicon planar medium power transistor. Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high-frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.
ZTX653STOB Features
100 Volt VCEO
2 Amp continuous current
Low saturation voltage
Ptot=1 Watt
ZTX653STOB Applications
Automotive
Advanced driver assistance systems (ADAS)
Industrial
Building automation
Enterprise systems
Enterprise machine
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