ZTX651STOA
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- Mfr.Part #
- ZTX651STOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A E-LINE
- Stock
- 13,396
- In Stock ：
- 13,396
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 4.95mm
- Package / Case :
- E-Line-3, Formed Leads
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- DC Current Gain-Min (hFE) :
- 40
- Weight :
- 453.59237mg
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 175MHz
- Max Power Dissipation :
- 1W
- Length :
- 4.95mm
- Transition Frequency :
- 140MHz
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- 2A
- Voltage - Rated DC :
- 60V
- Collector Emitter Voltage (VCEO) :
- 500mV
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 230mV
- Reach Compliance Code :
- Unknown
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~200°C TJ
- Qualification Status :
- Not Qualified
- Collector Base Voltage (VCBO) :
- 80V
- Terminal Form :
- Wire
- Transistor Element Material :
- SILICON
- Width :
- 3.94mm
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Current Rating :
- 2A
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Finish :
- MATTE TIN
- Max Collector Current :
- 2A
- Reference Standard :
- CECC
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSIP-W3
- Published :
- 2006
- Base Part Number :
- ZTX651
- RoHS Status :
- RoHS Compliant
- HTS Code :
- 8541.29.00.75
- Lead Free :
- Lead Free
- Datasheets
- ZTX651STOA
ZTX651STOA Documents
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX651STOA Overview
The collector emitter saturation voltage is 230mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 2A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.In the part, the transition frequency is 140MHz.A maximum collector current of 2A volts can be achieved.
ZTX651STOA Features
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 140MHz
ZTX651STOA Applications
There are a lot of Diodes Incorporated
ZTX651STOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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