ZTX651
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- Mfr.Part #
- ZTX651
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A E-LINE
- Stock
- 391
- In Stock ：
- 391
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Height :
- 4.01mm
- DC Current Gain-Min (hFE) :
- 100
- Number of Pins :
- 3
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Power Dissipation :
- 1W
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Type :
- NPN
- Pin Count :
- 3
- Transition Frequency :
- 175MHz
- Max Collector Current :
- 2A
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 230mV
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Continuous Collector Current :
- 2A
- Gain Bandwidth Product :
- 175MHz
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- E-Line-3
- Terminal Form :
- Wire
- Current Rating :
- 2A
- Frequency :
- 175MHz
- Weight :
- 453.59237mg
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 15 Weeks
- ECCN Code :
- EAR99
- Width :
- 2.41mm
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~200°C TJ
- Voltage - Rated DC :
- 60V
- Published :
- 1997
- Length :
- 4.77mm
- Element Configuration :
- Single
- Base Part Number :
- ZTX651
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 1W
- Packaging :
- Bulk
- Lead Free :
- Lead Free
- Datasheets
- ZTX651
ZTX651 Documents
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX651 Overview
A collector emitter saturation voltage of 230mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A constant collector voltage of 2A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 175MHz.A maximum collector current of 2A volts is possible.
ZTX651 Features
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 175MHz
ZTX651 Applications
There are a lot of Diodes Incorporated ZTX651 applications of single BJT transistors.
-
Inverter
-
Interface
-
Muting
-
Driver
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