ZTX649
- Mfr.Part #
- ZTX649
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 2A E-LINE
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 25V
- Transition Frequency :
- 240MHz
- Factory Lead Time :
- 15 Weeks
- Length :
- 4.77mm
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 2A
- Max Collector Current :
- 2A
- Continuous Collector Current :
- 2A
- Operating Temperature :
- -55°C~200°C TJ
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 1W
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- NPN
- Weight :
- 453.59237mg
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Frequency :
- 240MHz
- Pin Count :
- 3
- Base Part Number :
- ZTX649
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- 230mV
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Collector Base Voltage (VCBO) :
- 35V
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Through Hole
- Height :
- 4.01mm
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 240MHz
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Voltage - Rated DC :
- 25V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- E-Line-3
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 25V
- Published :
- 2012
- Terminal Form :
- Wire
- Width :
- 2.41mm
- Element Configuration :
- Single
- Max Power Dissipation :
- 1W
- Datasheets
- ZTX649
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX649 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of 230mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 2A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 240MHz in the part.When collector current reaches its maximum, it can reach 2A volts.
ZTX649 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 240MHz
ZTX649 Applications
There are a lot of Diodes Incorporated
ZTX649 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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