ZTX649
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- Mfr.Part #
- ZTX649
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 2A E-LINE
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Wire
- Max Collector Current :
- 2A
- Factory Lead Time :
- 15 Weeks
- Lead Free :
- Lead Free
- Current Rating :
- 2A
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Weight :
- 453.59237mg
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 35V
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 25V
- Operating Temperature :
- -55°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Height :
- 4.01mm
- Transistor Type :
- NPN
- Pin Count :
- 3
- Max Power Dissipation :
- 1W
- Packaging :
- Bulk
- Transition Frequency :
- 240MHz
- Radiation Hardening :
- No
- Package / Case :
- E-Line-3
- Gain Bandwidth Product :
- 240MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 4.77mm
- Polarity/Channel Type :
- NPN
- Continuous Collector Current :
- 2A
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Published :
- 2012
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 25V
- Collector Emitter Saturation Voltage :
- 230mV
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- ZTX649
- Width :
- 2.41mm
- Power Dissipation :
- 1W
- Frequency :
- 240MHz
- Terminal Finish :
- Matte Tin (Sn)
- Voltage - Rated DC :
- 25V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Datasheets
- ZTX649
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX649 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of 230mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 2A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 240MHz in the part.When collector current reaches its maximum, it can reach 2A volts.
ZTX649 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 240MHz
ZTX649 Applications
There are a lot of Diodes Incorporated
ZTX649 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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