ZTX614

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Mfr.Part #
ZTX614
Manufacturer
onsemi
Package / Case
E-Line-3
Datasheet
Download
Description
TRANS NPN DARL 100V 0.8A TO226
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Peak Reflow Temperature (Cel) :
260
Collector Base Voltage (VCBO) :
120V
Current Rating :
800mA
Pin Count :
3
Radiation Hardening :
No
Length :
4.77mm
Pbfree Code :
yes
Height :
4.01mm
Width :
2.41mm
Polarity :
NPN
Number of Pins :
3
Lead Free :
Lead Free
JESD-609 Code :
e3
Transistor Type :
NPN - Darlington
ECCN Code :
EAR99
REACH SVHC :
No SVHC
Terminal Form :
Wire
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Power Dissipation :
1W
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Bulk
Mount :
Through Hole
Transistor Element Material :
SILICON
Voltage - Rated DC :
100V
Vce Saturation (Max) @ Ib, Ic :
1.25V @ 8mA, 800mA
Continuous Collector Current :
800mA
Emitter Base Voltage (VEBO) :
10V
Factory Lead Time :
15 Weeks
Collector Emitter Saturation Voltage :
1.25V
Weight :
453.59237mg
Time@Peak Reflow Temperature-Max (s) :
40
Current - Collector Cutoff (Max) :
100nA ICBO
Published :
2006
Max Collector Current :
800mA
Max Power Dissipation :
1W
Mounting Type :
Through Hole
Base Part Number :
ZTX614
Package / Case :
E-Line-3
Number of Elements :
1
Terminal Finish :
Matte Tin (Sn)
DC Current Gain (hFE) (Min) @ Ic, Vce :
10000 @ 500mA 5V
Collector Emitter Breakdown Voltage :
100V
Operating Temperature :
-55°C~200°C TJ
Collector Emitter Voltage (VCEO) :
100V
Datasheets
ZTX614
Introducing Transistors - Bipolar (BJT) - Single onsemi ZTX614 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Base Part Number:ZTX614, Package / Case:E-Line-3, Operating Temperature:-55°C~200°C TJ, ZTX614 pinout, ZTX614 datasheet PDF, ZTX614 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi ZTX614 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi ZTX614


NPN - Darlington -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON E-Line-3 Bulk Through Hole

ZTX614 Overview


This device has a DC current gain of 10000 @ 500mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.25V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 800mA is necessary for high efficiency.The base voltage of the emitter can be kept at 10V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 800mA.The maximum collector current is 800mA volts.

ZTX614 Features


the DC current gain for this device is 10000 @ 500mA 5V
a collector emitter saturation voltage of 1.25V
the vce saturation(Max) is 1.25V @ 8mA, 800mA
the emitter base voltage is kept at 10V
the current rating of this device is 800mA


ZTX614 Applications


There are a lot of Diodes Incorporated
ZTX614 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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