ZTX605
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- Mfr.Part #
- ZTX605
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 1A E-LINE
- Stock
- 25,322
- In Stock ：
- 25,322
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 4.01mm
- Collector Base Voltage (VCBO) :
- 140V
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 1V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Number of Elements :
- 1
- Width :
- 2.41mm
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Length :
- 4.77mm
- Polarity :
- NPN
- Continuous Collector Current :
- 1A
- Package / Case :
- E-Line-3
- Collector Emitter Breakdown Voltage :
- 120V
- Transistor Type :
- NPN - Darlington
- Max Power Dissipation :
- 1W
- Pin Count :
- 3
- Factory Lead Time :
- 15 Weeks
- REACH SVHC :
- No SVHC
- Current Rating :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 10μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 1A 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 150MHz
- Terminal Form :
- Wire
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 120V
- Collector Emitter Voltage (VCEO) :
- 120V
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~200°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Max Collector Current :
- 1A
- Lead Free :
- Lead Free
- Base Part Number :
- ZTX605
- Emitter Base Voltage (VEBO) :
- 10V
- Frequency - Transition :
- 150MHz
- Weight :
- 453.59237mg
- Power Dissipation :
- 1W
- Published :
- 1997
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- ZTX605
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NPN - Darlington -55°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON E-Line-3 Bulk Through Hole
ZTX605 Overview
This device has a DC current gain of 2000 @ 1A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1.5V @ 1mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A maximum collector current of 1A volts is possible.
ZTX605 Features
the DC current gain for this device is 2000 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX605 Applications
There are a lot of Diodes Incorporated
ZTX605 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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