ZTX457
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- Mfr.Part #
- ZTX457
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A E-LINE
- Stock
- 2,103
- In Stock ：
- 2,103
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Gain Bandwidth Product :
- 75MHz
- Max Frequency :
- 20MHz
- Max Power Dissipation :
- 1W
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Base Part Number :
- ZTX457
- Max Collector Current :
- 500mA
- Transistor Element Material :
- SILICON
- Terminal Form :
- Wire
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA 10V
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 4.77mm
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- HTS Code :
- 8541.29.00.75
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 300V
- Package / Case :
- E-Line-3
- Operating Temperature :
- -55°C~200°C TJ
- Current Rating :
- 500mA
- Factory Lead Time :
- 15 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Height :
- 4.01mm
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 300V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Width :
- 2.41mm
- Weight :
- 453.59237mg
- Manufacturer Package Identifier :
- E-Line
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2006
- Transition Frequency :
- 75MHz
- Continuous Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- 300mV
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 300V
- Voltage - Rated DC :
- 300V
- Datasheets
- ZTX457
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX457 Overview
This device has a DC current gain of 50 @ 50mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A maximum collector current of 500mA volts is possible.
ZTX457 Features
the DC current gain for this device is 50 @ 50mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 75MHz
ZTX457 Applications
There are a lot of Diodes Incorporated
ZTX457 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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