ZTX457
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- Mfr.Part #
- ZTX457
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A E-LINE
- Stock
- 2,103
- In Stock ：
- 2,103
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Number of Pins :
- 3
- Max Frequency :
- 20MHz
- Operating Temperature :
- -55°C~200°C TJ
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Published :
- 2006
- Current Rating :
- 500mA
- Height :
- 4.01mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 300V
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 300mV
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Through Hole
- Length :
- 4.77mm
- Collector Base Voltage (VCBO) :
- 300V
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- E-Line-3
- Terminal Form :
- Wire
- Width :
- 2.41mm
- Element Configuration :
- Single
- Voltage - Rated DC :
- 300V
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 15 Weeks
- Number of Terminations :
- 3
- Transition Frequency :
- 75MHz
- Transistor Element Material :
- SILICON
- Base Part Number :
- ZTX457
- Continuous Collector Current :
- 500mA
- ECCN Code :
- EAR99
- Manufacturer Package Identifier :
- E-Line
- Max Collector Current :
- 500mA
- HTS Code :
- 8541.29.00.75
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 1W
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA 10V
- JESD-609 Code :
- e3
- Weight :
- 453.59237mg
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Gain Bandwidth Product :
- 75MHz
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Datasheets
- ZTX457
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX457 Overview
This device has a DC current gain of 50 @ 50mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A maximum collector current of 500mA volts is possible.
ZTX457 Features
the DC current gain for this device is 50 @ 50mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 75MHz
ZTX457 Applications
There are a lot of Diodes Incorporated
ZTX457 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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