ZTX415
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- Mfr.Part #
- ZTX415
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.5A E-LINE
- Stock
- 9,030
- In Stock ：
- 9,030
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 4.01mm
- Base Part Number :
- ZTX415
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 15 Weeks
- Operating Temperature :
- -55°C~200°C TJ
- Mounting Type :
- Through Hole
- Published :
- 2006
- Continuous Collector Current :
- 500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 100V
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 10mA 10V
- Width :
- 2.41mm
- Collector Base Voltage (VCBO) :
- 260V
- Reference Standard :
- CECC
- JESD-609 Code :
- e3
- Current Rating :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 100V
- Pbfree Code :
- yes
- Max Power Dissipation :
- 680mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Weight :
- 453.59237mg
- Collector Emitter Saturation Voltage :
- 500mV
- Pin Count :
- 3
- Frequency :
- 40MHz
- Gain Bandwidth Product :
- 40MHz
- Terminal Form :
- Wire
- Polarity :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Lead Free :
- Lead Free
- Length :
- 4.77mm
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Packaging :
- Bulk
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Max Collector Current :
- 500mA
- Package / Case :
- E-Line-3
- Collector Emitter Breakdown Voltage :
- 100V
- Power Dissipation :
- 680mW
- Transition Frequency :
- 40MHz
- Transistor Type :
- NPN - Avalanche Mode
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- ZTX415
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NPN - Avalanche Mode -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON E-Line-3 Bulk Through Hole
ZTX415 Overview
In this device, the DC current gain is 25 @ 10mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 1mA, 10mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
ZTX415 Features
the DC current gain for this device is 25 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
ZTX415 Applications
There are a lot of Diodes Incorporated
ZTX415 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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