ZTX415
- Mfr.Part #
- ZTX415
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.5A E-LINE
- Stock
- 9,030
- In Stock :
- 9,030
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Voltage - Rated DC :
- 100V
- Terminal Position :
- BOTTOM
- Frequency :
- 40MHz
- Base Part Number :
- ZTX415
- Gain Bandwidth Product :
- 40MHz
- Terminal Form :
- Wire
- Transistor Type :
- NPN - Avalanche Mode
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 260V
- Height :
- 4.01mm
- Length :
- 4.77mm
- Current Rating :
- 500mA
- Pin Count :
- 3
- Polarity :
- NPN
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- Continuous Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- 500mV
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Max Collector Current :
- 500mA
- Max Power Dissipation :
- 680mW
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 10mA 10V
- Power Dissipation :
- 680mW
- Radiation Hardening :
- No
- Weight :
- 453.59237mg
- Width :
- 2.41mm
- Lead Free :
- Lead Free
- Published :
- 2006
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Package / Case :
- E-Line-3
- Operating Temperature :
- -55°C~200°C TJ
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Reference Standard :
- CECC
- Number of Pins :
- 3
- Factory Lead Time :
- 15 Weeks
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn)
- Transition Frequency :
- 40MHz
- Collector Emitter Voltage (VCEO) :
- 100V
- Datasheets
- ZTX415
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NPN - Avalanche Mode -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON E-Line-3 Bulk Through Hole
ZTX415 Overview
In this device, the DC current gain is 25 @ 10mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 1mA, 10mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
ZTX415 Features
the DC current gain for this device is 25 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
ZTX415 Applications
There are a lot of Diodes Incorporated
ZTX415 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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