ZTX449
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- Mfr.Part #
- ZTX449
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A E-LINE
- Stock
- 33,087
- In Stock ：
- 33,087
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 1A
- Collector Emitter Breakdown Voltage :
- 30V
- Current Rating :
- 1A
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Package / Case :
- E-Line-3
- JESD-609 Code :
- e3
- Width :
- 2.41mm
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 1W
- Number of Terminations :
- 3
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- 1V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 1A
- Transistor Type :
- NPN
- Transition Frequency :
- 150MHz
- Element Configuration :
- Single
- Max Power Dissipation :
- 1W
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Packaging :
- Bulk
- Published :
- 2006
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 4.77mm
- Height :
- 4.01mm
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 30V
- Frequency :
- 150MHz
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- 30V
- Terminal Form :
- Wire
- Operating Temperature :
- -55°C~200°C TJ
- Weight :
- 453.59237mg
- Gain Bandwidth Product :
- 150MHz
- Datasheets
- ZTX449
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX449 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 200mA, 2A.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
ZTX449 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX449 Applications
There are a lot of Diodes Incorporated
ZTX449 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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