ZTX415STZ
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- Mfr.Part #
- ZTX415STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.5A E-LINE
- Stock
- 36,048
- In Stock ：
- 36,048
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 453.59237mg
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 10mA 10V
- Radiation Hardening :
- No
- Transition Frequency :
- 40MHz
- Height :
- 4.01mm
- Transistor Application :
- SWITCHING
- Continuous Collector Current :
- 500mA
- Max Collector Current :
- 500mA
- Factory Lead Time :
- 15 Weeks
- Published :
- 2012
- Base Part Number :
- ZTX415
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Pin Count :
- 3
- Packaging :
- Tape and Box (TB)
- Gain Bandwidth Product :
- 40MHz
- Polarity :
- NPN
- HTS Code :
- 8541.21.00.95
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 500mV
- Operating Temperature :
- -55°C~175°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 100V
- Package / Case :
- E-Line-3, Formed Leads
- Mounting Type :
- Through Hole
- Width :
- 2.41mm
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Reference Standard :
- CECC
- Max Power Dissipation :
- 680mW
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Base Voltage (VCBO) :
- 260V
- Voltage - Rated DC :
- 100V
- Transistor Type :
- NPN - Avalanche Mode
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 4.77mm
- REACH SVHC :
- No SVHC
- Current Rating :
- 500mA
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Wire
- Element Configuration :
- Single
- Datasheets
- ZTX415STZ
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NPN - Avalanche Mode -55°C~175°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX415STZ Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 10mA 10V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 40MHz.A maximum collector current of 500mA volts can be achieved.
ZTX415STZ Features
the DC current gain for this device is 25 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
ZTX415STZ Applications
There are a lot of Diodes Incorporated
ZTX415STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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