ZTX455
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- Mfr.Part #
- ZTX455
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 140V 1A E-LINE
- Stock
- 21,995
- In Stock ：
- 21,995
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Number of Elements :
- 1
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 160V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 15mA, 150mA
- Voltage - Rated DC :
- 140V
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 140V
- Pin Count :
- 3
- Length :
- 4.77mm
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 100MHz
- Terminal Form :
- Wire
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2006
- Package / Case :
- E-Line-3
- Collector Emitter Breakdown Voltage :
- 140V
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 700mV
- Weight :
- 453.59237mg
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1W
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Factory Lead Time :
- 15 Weeks
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Power Dissipation :
- 1W
- Packaging :
- Bulk
- Current Rating :
- 1A
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- 1A
- Number of Terminations :
- 3
- Height :
- 4.01mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Width :
- 2.41mm
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 100MHz
- Base Part Number :
- ZTX455
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~200°C TJ
- Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Datasheets
- ZTX455
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX455 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 15mA, 150mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
ZTX455 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
ZTX455 Applications
There are a lot of Diodes Incorporated
ZTX455 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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