ZTX453STZ
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- Mfr.Part #
- ZTX453STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A E-LINE
- Stock
- 67,438
- In Stock ：
- 67,438
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Wire
- Lead Free :
- Lead Free
- Packaging :
- Tape and Box (TB)
- Collector Base Voltage (VCBO) :
- 120V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 1A
- Power Dissipation :
- 1W
- Gain Bandwidth Product :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 100V
- Factory Lead Time :
- 15 Weeks
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 15mA, 150mA
- Max Collector Current :
- 1A
- Collector Emitter Saturation Voltage :
- 700mV
- Voltage - Rated DC :
- 100V
- Number of Pins :
- 3
- Number of Elements :
- 1
- Height :
- 4.01mm
- Collector Emitter Voltage (VCEO) :
- 100V
- Element Configuration :
- Single
- Mount :
- Through Hole
- Transition Frequency :
- 150MHz
- Published :
- 2006
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Width :
- 2.41mm
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1W
- Weight :
- 453.59237mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- JESD-609 Code :
- e3
- Frequency :
- 150MHz
- Operating Temperature :
- -55°C~200°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 4.77mm
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Continuous Collector Current :
- 1A
- Base Part Number :
- ZTX453
- Package / Case :
- E-Line-3, Formed Leads
- Datasheets
- ZTX453STZ
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX453STZ Overview
DC current gain in this device equals 40 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 15mA, 150mA.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 150MHz.In extreme cases, the collector current can be as low as 1A volts.
ZTX453STZ Features
the DC current gain for this device is 40 @ 150mA 10V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX453STZ Applications
There are a lot of Diodes Incorporated
ZTX453STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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