ZTX453
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- Mfr.Part #
- ZTX453
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A E-LINE
- Stock
- 6,502
- In Stock ：
- 6,502
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 1A
- Terminal Form :
- Wire
- Packaging :
- Bulk
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Published :
- 1997
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Package / Case :
- E-Line-3
- Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Weight :
- 453.59237mg
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 15mA, 150mA
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 700mV
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 100V
- Factory Lead Time :
- 15 Weeks
- Continuous Collector Current :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 120V
- Pin Count :
- 3
- Mount :
- Through Hole
- Base Part Number :
- ZTX453
- Height :
- 4.01mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~200°C TJ
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 150MHz
- Length :
- 4.77mm
- Manufacturer Package Identifier :
- E-Line
- Width :
- 2.41mm
- Transition Frequency :
- 150MHz
- Frequency :
- 150MHz
- Max Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 100V
- Pbfree Code :
- yes
- Datasheets
- ZTX453
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NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX453 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 15mA, 150mA.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
ZTX453 Features
the DC current gain for this device is 40 @ 150mA 10V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX453 Applications
There are a lot of Diodes Incorporated
ZTX453 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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