VT6Z1T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Terminal Finish :

TIN COPPER

Collector Emitter Breakdown Voltage :

20V

Time@Peak Reflow Temperature-Max (s) :

10

Factory Lead Time :

13 Weeks

Published :

2016

Polarity/Channel Type :

NPN AND PNP

Radiation Hardening :

No

Max Power Dissipation :

150mW

Package / Case :

6-SMD

Frequency - Transition :

400MHz

Transition Frequency :

400MHz

Power - Max :

150mW

Transistor Application :

SWITCHING

Number of Terminations :

6

Number of Elements :

2

Current - Collector Cutoff (Max) :

100μA ICBO

JESD-609 Code :

e2

Transistor Element Material :

SILICON

Max Collector Current :

200mA

Pin Count :

6

Number of Pins :

6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Transistor Type :

NPN, PNP

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 2V

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

300mV

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS

Lead Free :

Lead Free

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

20V

Terminal Form :

Flat