VT6Z2T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Frequency - Transition :

350MHz

Transistor Type :

NPN, PNP

Number of Elements :

2

Terminal Finish :

TIN COPPER

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

10

Polarity :

NPN, PNP

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

50V

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

150mW

Operating Temperature :

150°C TJ

Pin Count :

6

Max Collector Current :

100mA

JESD-609 Code :

e2

Number of Terminations :

6

Collector Base Voltage (VCBO) :

50V

Number of Pins :

6

Factory Lead Time :

13 Weeks

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Pbfree Code :

yes

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

-150mV

Current - Collector Cutoff (Max) :

100nA ICBO

Mounting Type :

Surface Mount

Power - Max :

150mW

Terminal Form :

Flat

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Package / Case :

6-SMD

Published :

2015

Transition Frequency :

350MHz

Gain Bandwidth Product :

300MHz

Radiation Hardening :

No