VT6X2T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Package / Case :

6-SMD

Factory Lead Time :

13 Weeks

Number of Elements :

2

Transition Frequency :

350MHz

Transistor Element Material :

SILICON

Pin Count :

6

Transistor Application :

SWITCHING

Radiation Hardening :

No

Mount :

Surface Mount

Frequency - Transition :

350MHz

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

10

Peak Reflow Temperature (Cel) :

260

Power - Max :

150mW

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Number of Pins :

6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

300mV

JESD-609 Code :

e2

Lead Free :

Lead Free

Polarity/Channel Type :

NPN

Max Power Dissipation :

150mW

Terminal Form :

Flat

Terminal Finish :

TIN COPPER

Collector Base Voltage (VCBO) :

50V

Configuration :

SEPARATE, 2 ELEMENTS

Transistor Type :

2 NPN (Dual)

Operating Temperature :

150°C TJ

Published :

2002

Current - Collector Cutoff (Max) :

100nA ICBO

Max Collector Current :

100mA