VT6X2T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Application :

SWITCHING

Terminal Form :

Flat

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Power - Max :

150mW

Transition Frequency :

350MHz

Mounting Type :

Surface Mount

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2002

Factory Lead Time :

13 Weeks

Package / Case :

6-SMD

Mount :

Surface Mount

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Terminal Finish :

TIN COPPER

Pbfree Code :

yes

Configuration :

SEPARATE, 2 ELEMENTS

Transistor Type :

2 NPN (Dual)

Frequency - Transition :

350MHz

Time@Peak Reflow Temperature-Max (s) :

10

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

300mV

Polarity/Channel Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Number of Pins :

6

Collector Base Voltage (VCBO) :

50V

JESD-609 Code :

e2

Pin Count :

6

Max Power Dissipation :

150mW

Number of Terminations :

6

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99