VT6X12T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Elements :

2

Operating Temperature :

150°C TJ

Qualification Status :

Not Qualified

Published :

2009

Transition Frequency :

350MHz

JESD-609 Code :

e2

Voltage - Collector Emitter Breakdown (Max) :

50V

JESD-30 Code :

R-PDSO-F6

Frequency - Transition :

350MHz

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Transistor Element Material :

SILICON

Package / Case :

6-SMD, Flat Leads

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Transistor Type :

2 NPN (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

13 Weeks

Terminal Finish :

TIN COPPER

Current - Collector (Ic) (Max) :

100mA

Surface Mount :

yes

Polarity/Channel Type :

NPN

Power Dissipation-Max (Abs) :

0.15W

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA ICBO

Time@Peak Reflow Temperature-Max (s) :

10

Packaging :

Tape and Reel (TR)

Power - Max :

150mW

RoHS Status :

ROHS3 Compliant

Configuration :

Current Mirror

Pbfree Code :

yes

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Pin Count :

6