UT6MA3TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 4.5V

FET Type :

N and P-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

5.5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

5A 5.5A

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 10V

Surface Mount :

yes

JESD-30 Code :

S-PDSO-N6

Drain-source On Resistance-Max :

0.042Ohm

Factory Lead Time :

20 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

NO LEAD

Terminal Position :

Dual

Package / Case :

6-PowerUDFN

Number of Elements :

2

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

59m Ω @ 5A, 4.5V

Case Connection :

DRAIN

Power - Max :

2W

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

20V

ECCN Code :

EAR99

Packaging :

Cut Tape (CT)

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Avalanche Energy Rating (Eas) :

2 mJ

Pulsed Drain Current-Max (IDM) :

12A

RoHS Status :

ROHS3 Compliant