UT6MA3TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

2 mJ

DS Breakdown Voltage-Min :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

12A

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

59m Ω @ 5A, 4.5V

Package / Case :

6-PowerUDFN

Transistor Application :

SWITCHING

Number of Elements :

2

Packaging :

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 4.5V

ECCN Code :

EAR99

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 10V

Drain-source On Resistance-Max :

0.042Ohm

Transistor Element Material :

SILICON

JESD-30 Code :

S-PDSO-N6

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Power - Max :

2W

Factory Lead Time :

20 Weeks

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

FET Type :

N and P-Channel

Current - Continuous Drain (Id) @ 25°C :

5A 5.5A

Surface Mount :

yes

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

20V

Terminal Form :

NO LEAD

Drain Current-Max (Abs) (ID) :

5.5A