UT6MA2TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Drain to Source Voltage (Vdss) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Max :

2W Ta

Factory Lead Time :

16 Weeks

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Cut Tape (CT)

DS Breakdown Voltage-Min :

30V

FET Type :

N and P-Channel

Package / Case :

8-PowerUDFN

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.08Ohm

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Temperature :

150°C TJ

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

46m Ω @ 4A, 10V, 70m Ω @ 4A, 10V

JESD-30 Code :

S-PDSO-N6

Input Capacitance (Ciss) (Max) @ Vds :

180pF 305pF @ 15V

FET Feature :

Standard

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

6.4 mJ

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

12A

Drain Current-Max (Abs) (ID) :

4A

Gate Charge (Qg) (Max) @ Vgs :

4.3nC, 6.7nC @ 10V

Terminal Form :

NO LEAD