UT6K30TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-30 Code :

S-PDSO-N6

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 10V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Packaging :

Cut Tape (CT)

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

3A

DS Breakdown Voltage-Min :

60V

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Terminal Form :

NO LEAD

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 30V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

1.3 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Surface Mount :

yes

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

153m Ω @ 3A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

Standard

Factory Lead Time :

16 Weeks

Package / Case :

8-PowerUDFN

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

12A

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

2.7V @ 50μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.223Ohm

Power - Max :

2W Ta