UT6K3TCR
- Mfr.Part #
- UT6K3TCR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-PowerUDFN
- Datasheet
- Download
- Description
- 30V NCH+NCH MIDDLE POWER MOSFET
- Stock
- 15,246
- In Stock :
- 15,246
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 20 Weeks
- Drain to Source Voltage (Vdss) :
- 30V
- Avalanche Energy Rating (Eas) :
- 2.4 mJ
- FET Type :
- 2 N-Channel (Dual)
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 4nC @ 4.5V
- Pulsed Drain Current-Max (IDM) :
- 12A
- Vgs(th) (Max) @ Id :
- 1.5V @ 1mA
- Power - Max :
- 2W
- JESD-30 Code :
- S-PDSO-N6
- Number of Terminations :
- 6
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 6-PowerUDFN
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Form :
- NO LEAD
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Number of Elements :
- 2
- Drain-source On Resistance-Max :
- 0.042Ohm
- Reach Compliance Code :
- not_compliant
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2017
- Drain Current-Max (Abs) (ID) :
- 5.5A
- DS Breakdown Voltage-Min :
- 30V
- Rds On (Max) @ Id, Vgs :
- 42m Ω @ 5A, 4.5V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Packaging :
- Cut Tape (CT)
- Datasheets
- UT6K3TCR
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UT6K3TCR datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ROHM Semiconductor stock available at
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