UT6K3TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

20 Weeks

Drain to Source Voltage (Vdss) :

30V

Avalanche Energy Rating (Eas) :

2.4 mJ

FET Type :

2 N-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

5.5A

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Pulsed Drain Current-Max (IDM) :

12A

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Power - Max :

2W

JESD-30 Code :

S-PDSO-N6

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Package / Case :

6-PowerUDFN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

NO LEAD

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Number of Elements :

2

Drain-source On Resistance-Max :

0.042Ohm

Reach Compliance Code :

not_compliant

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2017

Drain Current-Max (Abs) (ID) :

5.5A

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

42m Ω @ 5A, 4.5V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Packaging :

Cut Tape (CT)