US6K1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current Rating :

1.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

6 ns

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

10

Package / Case :

6-SMD, Flat Leads

Resistance :

340mOhm

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Number of Elements :

2

Factory Lead Time :

16 Weeks

Power Dissipation :

1W

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

6

Continuous Drain Current (ID) :

1.5A

Element Configuration :

Dual

Rds On (Max) @ Id, Vgs :

240m Ω @ 1.5A, 4.5V

Number of Pins :

6

Gate to Source Voltage (Vgs) :

12V

Turn On Delay Time :

7 ns

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2006

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 4.5V

ECCN Code :

EAR99

Base Part Number :

*K1

Rise Time :

9ns

FET Type :

2 N-Channel (Dual)

Pin Count :

6

Threshold Voltage :

1.5V

Turn-Off Delay Time :

15 ns

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1W

Pbfree Code :

yes

Voltage - Rated DC :

30V

Operating Temperature :

150°C TJ

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V

JESD-609 Code :

e2

Terminal Finish :

Tin/Copper (Sn/Cu)

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No