US6K4TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Package / Case :

6-SMD, Flat Leads

Mount :

Surface Mount

Published :

2007

Drain to Source Breakdown Voltage :

20V

Factory Lead Time :

16 Weeks

Rds On Max :

180 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 10V

Supplier Device Package :

TUMT6

Turn On Delay Time :

5 ns

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Rise Time :

5ns

Gate to Source Voltage (Vgs) :

10V

Continuous Drain Current (ID) :

1.5A

Turn-Off Delay Time :

20 ns

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Max Power Dissipation :

1W

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

180mOhm @ 1.5A, 4.5V

Fall Time (Typ) :

3 ns

Number of Pins :

6

Base Part Number :

*K4

Input Capacitance :

110pF

Operating Temperature :

150°C TJ

Min Operating Temperature :

-55°C

Drain to Source Resistance :

130mOhm

Power - Max :

1W

FET Feature :

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C :

1.5A

Power Dissipation :

1W

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1V @ 1mA

FET Type :

2 N-Channel (Dual)