US6J2TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1W

Factory Lead Time :

10 Weeks

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Continuous Drain Current (ID) :

1A

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 10V

Pbfree Code :

yes

Radiation Hardening :

No

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

390m Ω @ 1A, 4.5V

Pin Count :

6

Fall Time (Typ) :

10 ns

FET Type :

2 P-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

Rise Time :

8ns

Number of Elements :

2

Terminal Finish :

TIN COPPER

Base Part Number :

*J2

Number of Pins :

6

Drain to Source Breakdown Voltage :

-20V

Resistance :

390mOhm

Mount :

Surface Mount

Voltage - Rated DC :

-20V

Power Dissipation :

1W

Turn-Off Delay Time :

25 ns

Published :

2004

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Package / Case :

6-SMD, Flat Leads

Drain Current-Max (Abs) (ID) :

1A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

2V @ 1mA

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

10

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

20V

Current Rating :

-1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

9 ns

Number of Terminations :

6

JESD-609 Code :

e2

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V