US6J11TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

2.4nC @ 4.5V

Rise Time :

10ns

Transistor Element Material :

SILICON

JESD-609 Code :

e2

DS Breakdown Voltage-Min :

12V

Power - Max :

320mW

Base Part Number :

*J11

Fall Time (Typ) :

9 ns

Rds On (Max) @ Id, Vgs :

260m Ω @ 1.3A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

10

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

16 Weeks

Terminal Finish :

Tin/Copper (Sn/Cu)

Pin Count :

6

Drain to Source Voltage (Vdss) :

12V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Turn On Delay Time :

8 ns

Turn-Off Delay Time :

30 ns

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Package / Case :

6-SMD, Flat Leads

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Radiation Hardening :

No

Continuous Drain Current (ID) :

1.3A

Max Power Dissipation :

1W

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

0.0013A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

10V

FET Type :

2 P-Channel (Dual)

Number of Elements :

2

Number of Pins :

6

Published :

2012

Vgs(th) (Max) @ Id :

1V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 6V