UMG9NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

REACH SVHC :

No SVHC

Resistor - Base (R1) :

10k Ω

Mounting Type :

Surface Mount

Base Part Number :

*MG9

VCEsat-Max :

0.3 V

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

10k Ω

Packaging :

Tape and Reel (TR)

Pin Count :

5

Frequency - Transition :

250MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Max Operating Temperature :

150°C

Max Collector Current :

100mA

Number of Terminations :

5

Pbfree Code :

yes

Element Configuration :

Dual

Mount :

Surface Mount

JESD-609 Code :

e2

Package / Case :

5-TSSOP, SC-70-5, SOT-353

Factory Lead Time :

13 Weeks

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

50V

Number of Elements :

2

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Polarity :

NPN

Operating Supply Voltage :

50V

Min Operating Temperature :

-55°C

Continuous Collector Current :

50mA

Transition Frequency :

250MHz

hFE Min :

30

Terminal Form :

Gull wing

Voltage - Rated DC :

50V

Transistor Type :

2 NPN - Pre-Biased (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

150mW

Collector Emitter Voltage (VCEO) :

300mV

Power Dissipation :

150mW

Terminal Finish :

TIN COPPER

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Published :

2004

ECCN Code :

EAR99

Max Output Current :

100mA

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

500nA

Time@Peak Reflow Temperature-Max (s) :

10

Number of Pins :

5

Current Rating :

50mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA