UMG8NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500nA

Package / Case :

5-TSSOP, SC-70-5, SOT-353

Resistor - Emitter Base (R2) :

47k Ω

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 10

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Power Dissipation :

150mW

VCEsat-Max :

0.3 V

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

50V

REACH SVHC :

No SVHC

Number of Elements :

2

Radiation Hardening :

No

Continuous Collector Current :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

JESD-609 Code :

e2

Number of Pins :

5

Time@Peak Reflow Temperature-Max (s) :

10

Current Rating :

100mA

Factory Lead Time :

13 Weeks

Frequency - Transition :

250MHz

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

50V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Pin Count :

5

Transistor Application :

SWITCHING

Max Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Terminal Finish :

TIN COPPER

Number of Terminations :

5

Peak Reflow Temperature (Cel) :

260

hFE Min :

80

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Resistor - Base (R1) :

4.7k Ω

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Max Breakdown Voltage :

50V

Published :

2001

Max Power Dissipation :

150mW

Polarity :

NPN

Base Part Number :

*MG8

Collector Emitter Voltage (VCEO) :

300mV

Transition Frequency :

250MHz