UMG3NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

VCEsat-Max :

0.3 V

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Width :

1.35mm

JESD-609 Code :

e3/e2

Resistor - Base (R1) :

4.7k Ω

Terminal Finish :

TIN/TIN COPPER

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

ECCN Code :

EAR99

Max Power Dissipation :

150mW

Published :

2012

Peak Reflow Temperature (Cel) :

260

hFE Min :

100

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

10

Pin Count :

5

Continuous Collector Current :

100mA

Mounting Type :

Surface Mount

Mount :

Surface Mount

Pbfree Code :

yes

Number of Terminations :

5

Frequency - Transition :

250MHz

Polarity :

NPN

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Power Dissipation :

100mW

Collector Emitter Saturation Voltage :

150mV

Transistor Type :

2 NPN - Pre-Biased (Dual)

Transistor Application :

SWITCHING

Length :

2.1mm

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Voltage - Rated DC :

50V

Max Operating Temperature :

150°C

Collector Emitter Voltage (VCEO) :

50V

Factory Lead Time :

13 Weeks

Number of Elements :

2

Transition Frequency :

250MHz

Lead Free :

Lead Free

Current Rating :

100mA

Height :

900μm

Number of Pins :

5

Emitter Base Voltage (VEBO) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

*MG3

Min Operating Temperature :

-55°C

Package / Case :

5-TSSOP, SC-70-5, SOT-353

Additional Feature :

Digital

Max Breakdown Voltage :

50V

Collector Base Voltage (VCBO) :

50V