UMG2NTR
- Mfr.Part #
- UMG2NTR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-353
- Datasheet
- Download
- Description
- TRANS 2NPN PREBIAS 0.15W UMT5
- Stock
- 30,835
- In Stock :
- 30,835
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Published :
- 2004
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 30mA
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- hFE Min :
- 68
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 50V
- Max Collector Current :
- 100mA
- Voltage - Rated DC :
- 50V
- Number of Elements :
- 2
- Transition Frequency :
- 250MHz
- Element Configuration :
- Dual
- Max Operating Temperature :
- 150°C
- Pbfree Code :
- yes
- VCEsat-Max :
- 0.3 V
- Radiation Hardening :
- No
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 1
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 300mV
- Number of Terminations :
- 5
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Pin Count :
- 5
- Terminal Finish :
- TIN/TIN COPPER
- Polarity :
- NPN
- JESD-609 Code :
- e3/e2
- Factory Lead Time :
- 7 Weeks
- Number of Pins :
- 5
- Package / Case :
- SOT-353
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 150mW
- DC Current Gain-Min (hFE) :
- 68
- Collector Emitter Breakdown Voltage :
- 50V
- Min Operating Temperature :
- -55°C
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Termination :
- SMD/SMT
- Power Dissipation :
- 150mW
- Datasheets
- UMG2NTR
UMG2NTR Documents

UMG2NTR datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ROHM Semiconductor stock available at
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