UMG2NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

JESD-609 Code :

e3/e2

Polarity :

NPN

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Dual

hFE Min :

68

Number of Terminations :

5

Current Rating :

30mA

Power Dissipation :

150mW

Mount :

Surface Mount

Published :

2004

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Factory Lead Time :

7 Weeks

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Package / Case :

SOT-353

Pin Count :

5

DC Current Gain-Min (hFE) :

68

VCEsat-Max :

0.3 V

Collector Emitter Voltage (VCEO) :

300mV

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Transition Frequency :

250MHz

Max Power Dissipation :

150mW

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Termination :

SMD/SMT

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Number of Elements :

2

Number of Pins :

5

REACH SVHC :

No SVHC

Voltage - Rated DC :

50V

Transistor Application :

SWITCHING

Terminal Finish :

TIN/TIN COPPER