UMG2NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Finish :

TIN/TIN COPPER

Package / Case :

SOT-353

Collector Emitter Voltage (VCEO) :

300mV

Packaging :

Tape and Reel (TR)

Published :

2004

ECCN Code :

EAR99

Power Dissipation :

150mW

JESD-609 Code :

e3/e2

Termination :

SMD/SMT

Number of Terminations :

5

Factory Lead Time :

7 Weeks

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

150mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

Number of Elements :

2

Current Rating :

30mA

Transition Frequency :

250MHz

Pin Count :

5

Element Configuration :

Dual

DC Current Gain-Min (hFE) :

68

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Radiation Hardening :

No

Voltage - Rated DC :

50V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Polarity :

NPN

Number of Pins :

5

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

VCEsat-Max :

0.3 V

hFE Min :

68

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

50V