UMD6NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Termination :

SMD/SMT

Max Operating Temperature :

150°C

Additional Feature :

BUILT-IN BIAS RESISTOR

Radiation Hardening :

No

Max Output Current :

100mA

Terminal Finish :

TIN COPPER

HTS Code :

8541.21.00.75

Polarity :

NPN, PNP

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Frequency - Transition :

250MHz

Max Breakdown Voltage :

50V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

VCEsat-Max :

0.3 V

Published :

2004

Transition Frequency :

250MHz

Operating Supply Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Transistor Application :

SWITCHING

Number of Pins :

6

Base Part Number :

*MD6

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

150mW

Collector Emitter Breakdown Voltage :

50V

Current Rating :

100mA

JESD-609 Code :

e2

Time@Peak Reflow Temperature-Max (s) :

10

Number of Terminations :

6

Power Dissipation :

150mW

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

hFE Min :

100

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Pin Count :

6

Resistor - Base (R1) :

4.7k Ω

Max Collector Current :

100mA

Factory Lead Time :

13 Weeks

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Min Operating Temperature :

-55°C

Number of Elements :

2

ECCN Code :

EAR99

Package / Case :

6-TSSOP, SC-88, SOT-363