UMD12NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Base Part Number :

MD12

HTS Code :

8541.21.00.75

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

47k Ω

Transition Frequency :

250MHz

Pin Count :

6

Current Rating :

30mA

Time@Peak Reflow Temperature-Max (s) :

10

Number of Pins :

6

Published :

2004

Max Output Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Current :

1A

Mounting Type :

Surface Mount

Max Power Dissipation :

150mW

Factory Lead Time :

13 Weeks

Collector Emitter Voltage (VCEO) :

300mV

Operating Supply Voltage :

50V

Mount :

Surface Mount

hFE Min :

68

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

500nA

Number of Elements :

2

Max Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

REACH SVHC :

No SVHC

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Terminal Form :

Gull wing

Frequency - Transition :

250MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Resistor - Base (R1) :

47k Ω

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Lead Free :

Lead Free

Radiation Hardening :

No

Number of Terminations :

6

Voltage :

50V

Max Collector Current :

100mA

Pbfree Code :

yes

Element Configuration :

Dual

Power Dissipation :

150mW

Polarity :

NPN, PNP

Package / Case :

6-TSSOP, SC-88, SOT-363