UMB4NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

JESD-609 Code :

e3/e2

Number of Pins :

6

Power Dissipation :

150mW

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

-5V

Voltage - Rated DC :

-50V

Max Breakdown Voltage :

50V

HTS Code :

8541.21.00.75

Base Part Number :

MB4

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Mounting Type :

Surface Mount

hFE Min :

100

Mount :

Surface Mount

Max Operating Temperature :

150°C

Additional Feature :

Digital

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

300mV

Current Rating :

-100mA

Element Configuration :

Dual

VCEsat-Max :

0.3 V

Max Power Dissipation :

150mW

Max Collector Current :

100mA

Number of Terminations :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Emitter Breakdown Voltage :

50V

Continuous Collector Current :

-100mA

Published :

2001

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

PNP

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

10

Transition Frequency :

250MHz

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Transistor Application :

SWITCHING

Terminal Finish :

TIN/TIN COPPER

ECCN Code :

EAR99

Frequency - Transition :

250MHz

Transistor Type :

2 PNP - Pre-Biased (Dual)

Terminal Form :

Gull wing

Pbfree Code :

yes

Factory Lead Time :

13 Weeks

Resistor - Base (R1) :

10k Ω