UMB4NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

2 PNP - Pre-Biased (Dual)

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

300mV

Max Power Dissipation :

150mW

JESD-609 Code :

e3/e2

Current Rating :

-100mA

Pin Count :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Time@Peak Reflow Temperature-Max (s) :

10

VCEsat-Max :

0.3 V

Factory Lead Time :

13 Weeks

Max Breakdown Voltage :

50V

Published :

2001

Number of Pins :

6

Resistor - Base (R1) :

10k Ω

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

MB4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Min Operating Temperature :

-55°C

Mount :

Surface Mount

hFE Min :

100

Terminal Form :

Gull wing

ECCN Code :

EAR99

HTS Code :

8541.21.00.75

Element Configuration :

Dual

Terminal Finish :

TIN/TIN COPPER

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Voltage - Rated DC :

-50V

Transistor Application :

SWITCHING

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Elements :

2

Emitter Base Voltage (VEBO) :

-5V

Power Dissipation :

150mW

Additional Feature :

Digital

Transition Frequency :

250MHz

Continuous Collector Current :

-100mA

Max Operating Temperature :

150°C

Max Collector Current :

100mA

Polarity :

PNP

Pbfree Code :

yes

Frequency - Transition :

250MHz