UMB3NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

Factory Lead Time :

10 Weeks

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

50V

Current Rating :

-100mA

Power Dissipation :

150mW

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

Mount :

Surface Mount

Package / Case :

SOT-363

Transition Frequency :

250MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Max Power Dissipation :

150mW

Number of Pins :

6

REACH SVHC :

No SVHC

Element Configuration :

Dual

VCEsat-Max :

0.3 V

Additional Feature :

BUILT-IN BIAS RESISTOR

Lead Free :

Lead Free

Number of Elements :

2

Polarity :

PNP

DC Current Gain-Min (hFE) :

100

Number of Terminations :

6

HTS Code :

8541.21.00.75

Transistor Application :

SWITCHING

Published :

2005

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Pin Count :

6

hFE Min :

100

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

10

Voltage - Rated DC :

-50V