UM6K1NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

35ns

Fall Time (Typ) :

35 ns

Pin Count :

6

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Dual Supply Voltage :

30V

Rds On (Max) @ Id, Vgs :

8 Ω @ 10mA, 4V

Number of Channels :

1

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

13pF @ 5V

Continuous Drain Current (ID) :

100mA

Max Power Dissipation :

150mW

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

30V

Threshold Voltage :

1.5V

Operating Mode :

ENHANCEMENT MODE

Current Rating :

100mA

Mount :

Surface Mount

Number of Terminations :

6

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Element Configuration :

Dual

Package / Case :

6-TSSOP, SC-88, SOT-363

Turn On Delay Time :

15 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6

Published :

2006

Termination :

SMD/SMT

Factory Lead Time :

12 Weeks

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

Operating Temperature :

150°C TJ

Base Part Number :

*K1

Nominal Vgs :

1.5 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.5V @ 100μA

Number of Elements :

2

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Power Dissipation :

150mW

Turn-Off Delay Time :

80 ns

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

30V

Resistance :

13Ohm

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Application :

SWITCHING