UM6K31NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate, 2.5V Drive

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

150°C TJ

Turn-Off Delay Time :

18 ns

Vgs(th) (Max) @ Id :

2.3V @ 1mA

Rise Time :

5ns

Pin Count :

6

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

2

Number of Terminations :

6

Turn On Delay Time :

3.5 ns

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 250mA, 10V

Continuous Drain Current (ID) :

250mA

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Number of Elements :

2

Published :

2007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

150mW

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10

Mount :

Surface Mount

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

15pF @ 25V

FET Type :

2 N-Channel (Dual)

RoHS Status :

ROHS3 Compliant

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Pins :

6

Factory Lead Time :

16 Weeks

Drain to Source Voltage (Vdss) :

60V

Fall Time (Typ) :

28 ns

Mounting Type :

Surface Mount

Terminal Form :

Gull wing