TTC011B,Q

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Mfr.Part #
TTC011B,Q
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
PB-FPOWERTRANSISTORTO-126NPC=10W
Stock
250
In Stock :
250

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Continuous Collector Current :
1 A
Transistor Polarity :
NPN
Current - Collector Cutoff (Max) :
200nA (ICBO)
RoHS :
Details
Package :
Tray
Product Status :
Active
Current - Collector (Ic) (Max) :
1 A
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA, 5V
Technology :
Si
Transistor Type :
NPN
Mounting Type :
Through Hole
Power - Max :
1.5 W
Manufacturer :
Toshiba
Packaging :
Tray
Operating Temperature :
150°C (TJ)
Minimum Operating Temperature :
-
Product Category :
Bipolar Transistors - BJT
Voltage - Collector Emitter Breakdown (Max) :
230 V
Series :
-
Supplier Device Package :
TO-126N
Maximum Operating Temperature :
+ 150 C
Frequency - Transition :
100MHz
Product Type :
BJTs - Bipolar Transistors
Package / Case :
TO-225AA, TO-126-3
Configuration :
Single
Subcategory :
Transistors
Mounting Style :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 50mA, 500mA
Brand :
Toshiba
Datasheets
TTC011B,Q
Introducing Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation TTC011B,Q from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C (TJ), Package / Case:TO-225AA, TO-126-3, TTC011B,Q pinout, TTC011B,Q datasheet PDF, TTC011B,Q amp .Beyond Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation TTC011B,Q ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN 150°C (TJ) 200nA (ICBO) TO-225AA, TO-126-3 Tray Through Hole

TTC011B,Q Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA, 5V.When VCE saturation is 1.5V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1 A for high efficiency.Supplier package TO-126N contains the product.The device has a 230 V maximal voltage - Collector Emitter Breakdown.

TTC011B,Q Features


the DC current gain for this device is 100 @ 100mA, 5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the supplier device package of TO-126N


TTC011B,Q Applications


There are a lot of Toshiba Semiconductor and Storage
TTC011B,Q applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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