TTC004B,Q
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- Mfr.Part #
- TTC004B,Q
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 160V 1.5A TO126N
- Stock
- 2,138
- In Stock ：
- 2,138
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-225AA, TO-126-3
- Frequency - Transition :
- 100MHz
- Supplier Device Package :
- TO-126N
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Packaging :
- Tube
- Power - Max :
- 10W
- Current - Collector (Ic) (Max) :
- 1.5A
- Voltage - Collector Emitter Breakdown (Max) :
- 160V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 5V
- Factory Lead Time :
- 12 Weeks
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Datasheets
- TTC004B,Q
NPN 150°C TJ 100nA ICBO TO-225AA, TO-126-3 Tube Through Hole
TTC004B,Q Overview
In this device, the DC current gain is 140 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Product comes in the supplier's device package TO-126N.There is a 160V maximal voltage in the device due to collector-emitter breakdown.
TTC004B,Q Features
the DC current gain for this device is 140 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-126N
TTC004B,Q Applications
There are a lot of Toshiba Semiconductor and Storage
TTC004B,Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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