TTC0002(Q)
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- Mfr.Part #
- TTC0002(Q)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-3PL
- Datasheet
- Download
- Description
- TRANS NPN 160V 18A TO3P
- Stock
- 28
- In Stock ：
- 28
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 180W
- Number of Elements :
- 1
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Published :
- 2009
- Package / Case :
- TO-3PL
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 900mA, 9A
- Collector Emitter Voltage (VCEO) :
- 160V
- Power Dissipation :
- 180W
- Max Collector Current :
- 18A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Factory Lead Time :
- 16 Weeks
- Collector Emitter Breakdown Voltage :
- 160V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Frequency :
- 30MHz
- Gain Bandwidth Product :
- 30MHz
- Collector Base Voltage (VCBO) :
- 160V
- Packaging :
- Bulk
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 5V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 2V
- Mounting Type :
- Through Hole
- Datasheets
- TTC0002(Q)
NPN 150°C TJ 1μA ICBO 1 Elements TO-3PL Bulk Through Hole
TTC0002(Q) Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 1A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 900mA, 9A.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 18A volts at Single BJT transistors maximum.
TTC0002(Q) Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 900mA, 9A
the emitter base voltage is kept at 5V
TTC0002(Q) Applications
There are a lot of Toshiba Semiconductor and Storage
TTC0002(Q) applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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