TTC015B,Q
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- Mfr.Part #
- TTC015B,Q
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- PB-F POWER TRANSISTOR TO-126N PC
- Stock
- 89
- In Stock ：
- 89
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package :
- Tray
- Current - Collector (Ic) (Max) :
- 2 A
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Maximum Operating Temperature :
- + 150 C
- Technology :
- Si
- Product Category :
- Bipolar Transistors - BJT
- RoHS :
- Details
- Minimum Operating Temperature :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA, 2V
- Continuous Collector Current :
- 2 A
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Supplier Device Package :
- TO-126N
- Transistor Type :
- NPN
- Manufacturer :
- Toshiba
- Package / Case :
- TO-225AA, TO-126-3
- Brand :
- Toshiba
- Mounting Style :
- Through Hole
- Configuration :
- Single
- Transistor Polarity :
- NPN
- Product Type :
- BJTs - Bipolar Transistors
- Operating Temperature :
- 150°C (TJ)
- Frequency - Transition :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Series :
- -
- Mounting Type :
- Through Hole
- Subcategory :
- Transistors
- Power - Max :
- 1.5 W
- Product Status :
- Active
- Packaging :
- Tray
- Datasheets
- TTC015B,Q
NPN 150°C (TJ) 100nA (ICBO) TO-225AA, TO-126-3 Tray Through Hole
TTC015B,Q Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA, 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 2 A.There is no device package available from the supplier for this product.Single BJT transistor shows a 80 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
TTC015B,Q Features
the DC current gain for this device is 100 @ 500mA, 2V
the vce saturation(Max) is 500mV @ 100mA, 1A
the supplier device package of TO-126N
TTC015B,Q Applications
There are a lot of Toshiba Semiconductor and Storage
TTC015B,Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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