TSC5804DCHC5G
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- Mfr.Part #
- TSC5804DCHC5G
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 450V 5A TO251
- Stock
- 42,215
- In Stock ：
- 42,215
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-251 (IPAK)
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 1A, 3.5A
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 200mA 3V
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 250μA
- Voltage - Collector Emitter Breakdown (Max) :
- 450V
- Packaging :
- Tube
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 5A
- Power - Max :
- 45W
- Mounting Type :
- Through Hole
- Datasheets
- TSC5804DCHC5G
NPN 150°C TJ 250μA TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
TSC5804DCHC5G Overview
This device has a DC current gain of 25 @ 200mA 3V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-251 (IPAK).Detection of Collector Emitter Breakdown at 450V maximal voltage is present.
TSC5804DCHC5G Features
the DC current gain for this device is 25 @ 200mA 3V
the vce saturation(Max) is 2V @ 1A, 3.5A
the supplier device package of TO-251 (IPAK)
TSC5804DCHC5G Applications
There are a lot of Taiwan Semiconductor Corporation
TSC5804DCHC5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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