TSC5303DCHC5G

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Mfr.Part #
TSC5303DCHC5G
Manufacturer
Taiwan Semiconductor
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS NPN 400V 3A TO251
Stock
35,586
In Stock :
35,586

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Manufacturer :
Taiwan Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Height :
7mm
Voltage - Collector Emitter Breakdown (Max) :
400V
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 1A 5V
Vce Saturation (Max) @ Ib, Ic :
700mV @ 100mA, 400mA
Mounting Type :
Through Hole
Supplier Device Package :
TO-251 (IPAK)
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Max Operating Temperature :
150°C
Max Power Dissipation :
30W
Operating Temperature :
-55°C~150°C TJ
Power - Max :
30W
Current - Collector (Ic) (Max) :
3A
Max Collector Current :
3A
Length :
6.5mm
Collector Base Voltage (VCBO) :
700V
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Width :
2.3mm
Number of Pins :
3
Packaging :
Tube
Current - Collector Cutoff (Max) :
10μA
Emitter Base Voltage (VEBO) :
9V
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
700V
Transistor Type :
NPN
Collector Emitter Saturation Voltage :
1V
Datasheets
TSC5303DCHC5G
Introducing Transistors - Bipolar (BJT) - Single Taiwan Semiconductor TSC5303DCHC5G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, TSC5303DCHC5G pinout, TSC5303DCHC5G datasheet PDF, TSC5303DCHC5G amp .Beyond Transistors - Bipolar (BJT) - Single Taiwan Semiconductor TSC5303DCHC5G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Taiwan Semiconductor TSC5303DCHC5G


NPN -55°C~150°C TJ 10μA TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole

TSC5303DCHC5G Overview


In this device, the DC current gain is 15 @ 1A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 100mA, 400mA.With the emitter base voltage set at 9V, an efficient operation can be achieved.Product comes in the supplier's device package TO-251 (IPAK).There is a 400V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

TSC5303DCHC5G Features


the DC current gain for this device is 15 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 700mV @ 100mA, 400mA
the emitter base voltage is kept at 9V
the supplier device package of TO-251 (IPAK)


TSC5303DCHC5G Applications


There are a lot of Taiwan Semiconductor Corporation
TSC5303DCHC5G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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