TSC5303DCHC5G
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- Mfr.Part #
- TSC5303DCHC5G
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 3A TO251
- Stock
- 35,586
- In Stock ：
- 35,586
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10μA
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 700V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 100mA, 400mA
- Current - Collector (Ic) (Max) :
- 3A
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1V
- Max Power Dissipation :
- 30W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-251 (IPAK)
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 5V
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Width :
- 2.3mm
- Power - Max :
- 30W
- Max Operating Temperature :
- 150°C
- Height :
- 7mm
- Collector Emitter Voltage (VCEO) :
- 700V
- Emitter Base Voltage (VEBO) :
- 9V
- Number of Pins :
- 3
- Length :
- 6.5mm
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Max Collector Current :
- 3A
- Packaging :
- Tube
- Datasheets
- TSC5303DCHC5G
TSC5303DCHC5G Documents
NPN -55°C~150°C TJ 10μA TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
TSC5303DCHC5G Overview
In this device, the DC current gain is 15 @ 1A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 100mA, 400mA.With the emitter base voltage set at 9V, an efficient operation can be achieved.Product comes in the supplier's device package TO-251 (IPAK).There is a 400V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
TSC5303DCHC5G Features
the DC current gain for this device is 15 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 700mV @ 100mA, 400mA
the emitter base voltage is kept at 9V
the supplier device package of TO-251 (IPAK)
TSC5303DCHC5G Applications
There are a lot of Taiwan Semiconductor Corporation
TSC5303DCHC5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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