TSC5988CT A3G
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- Mfr.Part #
- TSC5988CT A3G
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A TO92
- Stock
- 40,709
- In Stock ：
- 40,709
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Power - Max :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 5A
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2A 1V
- Transistor Type :
- NPN
- Packaging :
- Tape and Box (TB)
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package :
- TO-92
- Current - Collector (Ic) (Max) :
- 5A
- Frequency - Transition :
- 130MHz
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Datasheets
- TSC5988CT A3G
NPN -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
TSC5988CT A3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 2A 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 200mA, 5A.The product comes in the supplier device package of TO-92.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
TSC5988CT A3G Features
the DC current gain for this device is 120 @ 2A 1V
the vce saturation(Max) is 350mV @ 200mA, 5A
the supplier device package of TO-92
TSC5988CT A3G Applications
There are a lot of Taiwan Semiconductor Corporation
TSC5988CT A3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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