TSC5304EDCHC5G
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- Mfr.Part #
- TSC5304EDCHC5G
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO251
- Stock
- 36,062
- In Stock ：
- 36,062
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Supplier Device Package :
- TO-251 (IPAK)
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 17 @ 1A 5V
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Current - Collector Cutoff (Max) :
- 250μA
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 2.5A
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 35W
- Current - Collector (Ic) (Max) :
- 4A
- Datasheets
- TSC5304EDCHC5G
TSC5304EDCHC5G Documents
NPN 150°C TJ 250μA TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
TSC5304EDCHC5G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 17 @ 1A 5V.When VCE saturation is 1.5V @ 500mA, 2.5A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-251 (IPAK) contains the product.The device has a 400V maximal voltage - Collector Emitter Breakdown.
TSC5304EDCHC5G Features
the DC current gain for this device is 17 @ 1A 5V
the vce saturation(Max) is 1.5V @ 500mA, 2.5A
the supplier device package of TO-251 (IPAK)
TSC5304EDCHC5G Applications
There are a lot of Taiwan Semiconductor Corporation
TSC5304EDCHC5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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