TPS1101D
- Mfr.Part #
- TPS1101D
- Manufacturer
- Texas Instruments
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 15V 2.3A 8SOIC
- Stock
- 28
- In Stock :
- 28
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 5.5 ns
- Mount :
- Surface Mount
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Voltage - Rated DC :
- -15V
- Peak Reflow Temperature (Cel) :
- 260
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 8
- Turn On Delay Time :
- 6.5 ns
- Terminal Position :
- Dual
- Output Current :
- 2.3A
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, ESD PROTECTED
- Drain to Source Breakdown Voltage :
- 15V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Packaging :
- Tube
- JESD-609 Code :
- e4
- Current - Continuous Drain (Id) @ 25°C :
- 2.3A Ta
- Mounting Type :
- Surface Mount
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -40°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 2V
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- +2V, -15V
- FET Type :
- P-Channel
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 19 ns
- Power Dissipation-Max :
- 791mW Ta
- Number of Elements :
- 1
- Current Rating :
- -2.3A
- Factory Lead Time :
- 6 Weeks
- Power Dissipation :
- 791mW
- Thickness :
- 1.58mm
- Length :
- 4.9mm
- Continuous Drain Current (ID) :
- -2.3A
- Height :
- 1.75mm
- Base Part Number :
- TPS1101
- Nominal Vgs :
- -1.25 V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Transistor Element Material :
- SILICON
- Output Voltage :
- -15V
- Number of Terminations :
- 8
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Rise Time :
- 5.5ns
- Gate Charge (Qg) (Max) @ Vgs :
- 11.25nC @ 10V
- Width :
- 3.91mm
- Number of Pins :
- 8
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 2.5A, 10V
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 10V
- Element Configuration :
- Single
- Datasheets
- TPS1101D

P-Channel Tube 90m Ω @ 2.5A, 10V +2V, -15V 11.25nC @ 10V 8-SOIC (0.154, 3.90mm Width)
TPS1101D Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -2.3A.With a drain-source breakdown voltage of 15V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 15V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 19 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (2.7V 10V) reduces this device's overall power consumption.
TPS1101D Features
a continuous drain current (ID) of -2.3A
a drain-to-source breakdown voltage of 15V voltage
the turn-off delay time is 19 ns
TPS1101D Applications
There are a lot of Texas Instruments
TPS1101D applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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