TPS1101D
- Mfr.Part #
- TPS1101D
- Manufacturer
- Texas Instruments
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 15V 2.3A 8SOIC
- Stock
- 28
- In Stock :
- 28
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 4.9mm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rise Time :
- 5.5ns
- Number of Terminations :
- 8
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 791mW
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 2V
- Height :
- 1.75mm
- Width :
- 3.91mm
- Case Connection :
- Isolated
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 11.25nC @ 10V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, ESD PROTECTED
- Fall Time (Typ) :
- 5.5 ns
- Current Rating :
- -2.3A
- Pbfree Code :
- yes
- Vgs (Max) :
- +2V, -15V
- Nominal Vgs :
- -1.25 V
- Base Part Number :
- TPS1101
- Pin Count :
- 8
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Turn-Off Delay Time :
- 19 ns
- Thickness :
- 1.58mm
- FET Type :
- P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 2.3A Ta
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e4
- Drain to Source Breakdown Voltage :
- 15V
- Turn On Delay Time :
- 6.5 ns
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 2.5A, 10V
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 6 Weeks
- Packaging :
- Tube
- Output Voltage :
- -15V
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -15V
- Output Current :
- 2.3A
- Mounting Type :
- Surface Mount
- Number of Pins :
- 8
- Power Dissipation-Max :
- 791mW Ta
- Number of Elements :
- 1
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Continuous Drain Current (ID) :
- -2.3A
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Operating Temperature :
- -40°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 10V
- Datasheets
- TPS1101D

P-Channel Tube 90m Ω @ 2.5A, 10V +2V, -15V 11.25nC @ 10V 8-SOIC (0.154, 3.90mm Width)
TPS1101D Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -2.3A.With a drain-source breakdown voltage of 15V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 15V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 19 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (2.7V 10V) reduces this device's overall power consumption.
TPS1101D Features
a continuous drain current (ID) of -2.3A
a drain-to-source breakdown voltage of 15V voltage
the turn-off delay time is 19 ns
TPS1101D Applications
There are a lot of Texas Instruments
TPS1101D applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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