TPS1100PWR
- Mfr.Part #
- TPS1100PWR
- Manufacturer
- Texas Instruments
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 15V 1.27A 8TSSOP
- Stock
- 797
- In Stock :
- 797
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- Fall Time (Typ) :
- 10 ns
- Drain to Source Breakdown Voltage :
- -15V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 1.27A
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e4
- Transistor Application :
- SWITCHING
- Number of Pins :
- 8
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.4Ohm
- Base Part Number :
- TPS1100
- Rise Time :
- 10ns
- Factory Lead Time :
- 16 Weeks
- Packaging :
- Cut Tape (CT)
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 2V
- Pin Count :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Gold
- Vgs (Max) :
- +2V, -15V
- Transistor Element Material :
- SILICON
- Length :
- 3mm
- Current Rating :
- -1.27mA
- Width :
- 4.4mm
- Turn On Delay Time :
- 4.5 ns
- FET Type :
- P-Channel
- Terminal Position :
- Dual
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 5.45nC @ 10V
- Turn-Off Delay Time :
- 13 ns
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 1.5A, 10V
- Operating Temperature :
- -40°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 15V
- Height :
- 1.2mm
- Radiation Hardening :
- No
- Number of Terminations :
- 8
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, ESD PROTECTED
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Voltage - Rated DC :
- -15V
- Current - Continuous Drain (Id) @ 25°C :
- 1.27A Ta
- Thickness :
- 1mm
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Power Dissipation-Max :
- 504mW Ta
- Power Dissipation :
- 504mW
- Mounting Type :
- Surface Mount
- Datasheets
- TPS1100PWR

P-Channel Cut Tape (CT) 180m Ω @ 1.5A, 10V +2V, -15V 5.45nC @ 10V 15V 8-TSSOP (0.173, 4.40mm Width)
TPS1100PWR Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.27A.With a drain-source breakdown voltage of -15V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -15V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 13 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 4.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 15V.Using drive voltage (2.7V 10V) reduces this device's overall power consumption.
TPS1100PWR Features
a continuous drain current (ID) of 1.27A
a drain-to-source breakdown voltage of -15V voltage
the turn-off delay time is 13 ns
a 15V drain to source voltage (Vdss)
TPS1100PWR Applications
There are a lot of Texas Instruments
TPS1100PWR applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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