TPS1100PW

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Mount :

Surface Mount

Power Dissipation :

504mW

Fall Time (Typ) :

10 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Height :

1.2mm

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

1.27A Ta

Pin Count :

8

JESD-609 Code :

e4

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

12 Weeks

Number of Terminations :

8

Vgs (Max) :

+2V, -15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.5A, 10V

Turn On Delay Time :

4.5 ns

Gate to Source Voltage (Vgs) :

2V

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Terminal Position :

Dual

Additional Feature :

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Continuous Drain Current (ID) :

1.27A

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

5.45nC @ 10V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Turn-Off Delay Time :

13 ns

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 10V

ECCN Code :

EAR99

Packaging :

Tube

Operating Temperature :

-40°C~150°C TJ

Length :

3mm

Transistor Element Material :

SILICON

Base Part Number :

TPS1100

Drain to Source Breakdown Voltage :

15V

Drain-source On Resistance-Max :

0.4Ohm

Width :

4.4mm

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Rise Time :

10ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

504mW Ta

Pbfree Code :

yes

Thickness :

1mm